透射电镜电学测试样品杆与扫描电镜联合系统的搭建
矫丽丽1,郑 坤1*,王 晋1,高 攀1,邵瑞文1,张跃飞1,韩晓东1,张 泽1,2
(1.北京工业大学固体微结构与性能研究所,北京 100124;
2.浙江大学电子显微镜中心,材料科学与工程学院,浙江 杭州 310027)
摘 要 透射电子显微镜电学测试样品杆是用于透射电子显微镜中测试样品外场加载下电学性能的专用仪器。本文介绍通过对法兰及其它对接接口的系列设计,使该系统可应用于扫描电子显微镜中。该系列设计改造,能够大大拓展该电学测试系统的应用范围。以单根Si纳米线为例,在扫描电子显微镜中利用该电学测试系统实现Si纳米线弯曲变形下电输运性能的研究。
关键词 扫描电镜;透射电镜;电学性能
中图分类号:TN16;TG115.21+5.3 文献标识码:A doi:10.3969/j.issn.1000-6281.2016.04.001
Construction of a novel in-situ measurement system combining SEM with a STM-TEM holder
JIAO Li-li1,ZHENG Kun1*,WANG Jin1,GAO Pan1,SHAO Rui-wen1,ZHANG Yue-fei1,HAN Xiao-dong1,ZHANG Ze1,2
(1.Institute for Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124;2.College of Materials Science and Engineering,Zhejiang University,Hangzhou Zhejiang 310027,China)
Abstract A commercial scanning tunneling microscope-transmission electron microscope probing system (STM-TEM,nanofactory instruments) is developed for TEM. In this work, a novel upgrade on this probing system to make it suitable for both SEM and TEM is reported, which could greatly enlarge the application range of STM-TEM holder. And the change of electrical transport properties of a single Si nanowire during bending deformation is detected using this probing system.
Keywords scanning electron microscopy (SEM);transmission electron microscopy (TEM);electrical properties
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