高纯钽板中晶粒生长的取向相关性研究
柳亚辉，刘施峰﹡，范海洋，刘 庆
（重庆大学材料科学与工程学院，重庆 400044）
摘要 钽溅射靶材主要用于集成电路中导线的扩散阻挡层，其溅射性能受微观组织影响较大。本文采用电子背散射衍射（EBSD）技术，结合Extend Cahn-Hagel模型对周向轧制钽板的再结晶行为进行分析。并侧重于钽板再结晶初、中期与取向相关的晶粒生长速率的研究。结果表明，{111}<uvw>(<111>//ND)晶粒具有生长优势，初始阶段生长速率约为同期{001}<uvw>(<100>//ND)晶粒的1.6倍。
关键词 形核机制；电子背散射衍射（EBSD）技术；Extend Cahn-Hagel模型；生长速率
中图分类号：TG146.4+16;O766+.1;TG115.23 文献标识码：A doi:10.3969/j.issn.1000-6281.2016.01.003
Study on the orientation-dependent grain growth of high purity tantalum
LIU Ya-hui，LIU Shi-feng﹡，FAN Hai-yang，LIU Qing
（College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China）
Abstract Tantalum is commonly used for sputtering target and the sputtering performance is highly dependent on its annealed structure. In this paper, the orientation-dependent grain growths at the early and metaphase recrystallization stages were revealed via the electron backscatter diffraction combined with Extend Cahn-Hagel model. The results show that the growth rate for {111}<uvw>(<111>//ND) grains is about 1.6 times faster than that for {001}<uvw>(<100>//ND) grains.
Keywords nucleation mechanism；electron backscatter diffraction；Extend Cahn-Hagel model；growth rate
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