超薄纳米晶铜薄膜接触变形机制TEM研究
邹鹏远1，2，刘小萍1，张跃飞2*
( 1.太原理工大学表面工程研究所，太原030024；2. 北京工业大学固体微结构与性能研究所，北京100124)
摘 要：本文利用磁控溅射和光刻技术，制备纳米晶Cu薄膜/光刻胶/SiO2/Si复合材料；使用纳米压痕仪对纳米晶Cu薄膜（厚度约50nm）进行压痕接触变形，结合发展的薄膜转移技术，将纳米晶Cu薄膜压痕区域直接转移到透射电镜（TEM）铜网上对纳米晶Cu薄膜压痕区域进行变形机制研究。结果表明：在＜40nm的晶粒内，形变孪晶是薄膜与压头接触变形的主要途径，通过TEM观察发现形变孪晶是通过晶界发出的不全位错而形成，同时晶粒形状发生变化；发现晶粒内部出现由三个不全位错形成的非共格孪晶现象，共格孪晶部分出现‘台阶’，位错与孪晶发生交互作用。
关键词：形变孪晶；纳米压痕；铜薄膜；不全位错
中图分类号：TB383；O762；TG115.21+5.3 文献标识码：A doi:10.3969/j.issn.1000-6281.2015.05.006
Research on deforming mechanism of nanocrystalline Cu thin film under contact deformation
ZOU Peng-yuan1，2，LIU Xiao-ping1，ZHANG Yue-fei2*
(1.Research Institute of Surface Engineering, Taiyuan University of Technology , Taiyuan Shanxi 030024; 2.The Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124，China)
Abstract: In this paper, magnetron sputtering and Lithography technology were used to fabricate the "Cu/photoresist/ SiO2/Si" structure. Indentation deformation was conducted on Cu nanocrystalline thin film (approximately 50nm) with indenter. Using the developed thin film in-situ transmission technology, the thin film with indentation area could be directly transformed onto the copper grid for in-situ transmission electronic microscope research (TEM). The deforming mechanism of nanocrystalline Cu thin film in indentation area was observed by high resolution electronic microscope (HRTEM). The results showed that deformation twinning constituted the main deformation mode in the grains (<40nm). TEM results presented that twinning could be formed by the emission of partial dislocations from grain boundary, which could change the shape of grain. On the other hand, the self-multiplication of partial dislocation in the grain could also form the deformation twinning on the twinning plane under local stress.
Keywords:deformation twinning；nano-indentation；Cu film；partial dislocation
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