电子束辐照对单根Zn2GeO4纳米线电学特性的影响
李斯佳,吴 幸,孙 俊,孙立涛*
(东南大学-FEI纳皮米中心,MEMS教育部重点实验室,东南大学,江苏南京210096)
摘要:利用透射电子显微技术,对Zn2GeO4纳米线的微观结构以及元素成分进行了表征。采用STM-TEM电学测试样品杆在透射电子显微镜内原位构建一个基于Zn2GeO4纳米线的金属-半导体-金属(M-S-M)结构,在结构两端加电,发现随着辐照强度的增加,流过纳米线的电流增加且I-V曲线的开启电压减小。进一步分析表明这是由于金属电极中的电子受到更强的激发更容易越过金属与半导体形成的肖特基势垒,因此在原位TEM电学测试过程中,应该考虑到电子束辐照的影响,以便获得更加准确的测量结果。
关键词:Zn2GeO4纳米线;电子束辐照;肖特基结;原位透射电子显微技术
中图分类号:TN304.2;TG115.21+5.3;O766+.1 文献标识码:A doi:10.3969/j.1000-6281.2015-04.002
The effect of electron irradiation on the electrical characteristics of individual Zn2GeO4 nanowires
LI Si-jia, WU Xing, SUN Jun, SUN Li-tao*
(SEU-FEI Nano-Pico Center, Key laboratory of MEMS of Ministry of education,Southeast University,Nanjing Jiangsu 210096,China)
Abstract:The microstructure of Zn2GeO4 nanowires and elemental composition were characterized by transmission electron microscopy (TEM). By using STM-TEM electrical test holder, Zn2GeO4 nanowire based metal- semiconductor – metal (M-S-M) structure was in-situ constructed inside the TEM. With the increase of irradiation intensity, the current through the nanowire increases and the open voltage of the I-V curve decreases. This is because the electron in metal electrode is strongly inspired, and it passes over the schottky barrier between metal and semiconductor more easily. Therefore, in order to obtain more accurate measurement results, consideration should be given to the influence of electron beam irradiation in the process of in-situ TEM electrical tests.
Keywords:Zn2GeO4 nanowires;electron beam irradiation;Schottky junction;in-situtransmission electronmicroscopy
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