无镉的铜铟镓硒太阳电池关键膜层XPS及AFM分析
廖 荣，张海燕，王道然，杨铁铮，范 宇无镉的铜铟镓硒太阳电池关键膜层XPS及AFM分析
廖 荣1,2，张海燕1*，王道然2，杨铁铮2，范 宇2
(1.广东工业大学材料与能源学院，广东 广州 510090；2.华南理工大学电子与信息学院，广东 广州510640）
摘 要：应用溅射后硒化法和原子层沉积法分别制备了无镉的铜铟镓硒电池关键膜层CIGS光吸收薄膜和ZnO缓冲层，着重对该两膜层进行XPS和AFM表面分析，得到比较理想的制备工艺条件，并结合其它检测方法：SEM、XRD及吸收光谱等，证明采用操作简便、成本低廉的该工艺能制备出无镉的铜铟镓硒电池。通过I-V测试结果，该电池有一定的光电转换效率。
关键词：原子层沉积；氧化锌；XPS；AFM；无镉的铜铟镓硒太阳能电池
中图分类号：TM615；TG115.21+5.7 文献标识码：A
doi：10.3969/j.1000-6281.2014.03.004
XPS and AFM analysis of key layer of Cd-free CIGS solar cell
LIAO Rong1,2, ZHANG Hai-yan1*,WANG Dao-ran2,YANG Tie-zheng2,FAN Yu2
（1．School of Material and Energy, Guangdong University of Technology, Guangzhou Guangdong 510090；2. School of Electronic and Information Engineering, South China University of Technology, Guangzhou Guangdong 510641, China)
Abstract：CuIn1-xGaxSe2 light absorbingfilm and ZnO buffer layer for Cd-free CIGS solar cell were preparedby evaporating selenylation method after sputtering and atomic layer deposition.The two films were analyzed by X-ray photoelectron spectroscopy, atomic force microscope, scanning electron microscope, X-ray diffraction, and absorptionspectrum. The optimized preparation conditions were obtained. A photoelectric conversion efficiency of 3.84% was obtained in the Cd-free CIGS solar cell from the low-cost and simple preparation method.
Keywords:atomic layer deposition；zinc oxide；XPS；AFM；Cd-free CIGS solar cell
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