超薄SnO2/Ga2O3/SnO2异质结构的原子尺度表征与热稳定性研究
胡 捷,王佳恒,李凯旋,蒋仁辉,赵立功,张 莹,
李 雷,赵培丽,孟威威,贾双凤,郑 赫*,王建波*
(1. 武汉大学物理科学与技术学院,电子显微镜中心,人工微结构教育部重点实验室和高等研究院,湖北 武汉430072;2. 武汉大学苏州研究院,江苏 苏州215123;3. 武汉大学深圳研究院,广东 深圳518057)
摘 要 本文通过化学气相沉积法制备出Ga2O3@SnO2核壳结构纳米线,利用透射电子显微技术得到Ga2O3和SnO2的取向关系:,,并在原子尺度解析了Ga2O3@SnO2异质结构的相界面;在SnO2壳层中发现了大量面分布的反向畴结构,进一步在畴界处发现了具有三明治结构SnO2/Ga2O3/SnO2超薄异质结,其中Ga2O3层的厚度为0.3 nm;此外,超薄异质结构在高温下表现出优异的稳定性。研究结果为超小尺寸异质结构的制备与高温下的应用提供了重要参考。
关键词 Ga2O3;SnO2;核壳结构;异质结构;TEM表征;原位加热
中图分类号:TG115. 21+ 5. 3;O781; O766+. 1;O782+. 7;O522+. 2;O762
文献标识码:A doi:10.3969/j.issn.1000-6281.2022.04.006
Atomic-scale characterizationand thermal stability study of ultra-thin SnO2/Ga2O3/SnO2 heterostructure
HU Jie1, WANG Jia-heng1, LI Kai-xuan1, JIANG Ren-hui1, ZHAO Li-gong1, ZHANG Ying1, Li Lei1, ZHAO Pei-li1, MENG Wei-wei1, JIA Shuang-feng1, ZHENG He1,2,3∗, WANG Jian-bo1∗
(1. School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan Hubei 430072;2. Suzhou Institute of Wuhan University, Suzhou Jiangsu 215123;3. Wuhan University Shenzhen Research Institute, Shenzhen Guangdong 518057, China)
Abstract In this paper, Ga2O3@SnO2 core-shell structure nanowires were synthesized by chemical vapor deposition. The orientation relationship between Ga2O3 and SnO2 was obtained through SAED patterns and HAADF images by transmission electron microscopy: , . Furthermore, the HAADF image of phase boundary suggests that Ga2O3 and SnO2 matches well. A large number of SnO2/Ga2O3/SnO2 ultra-thin heterojunctions with sandwich structure were further discovered in reverse domain structure along . The thickness of ultra-thin Ga2O3 layer is only 0.3 nm. Thein-situ heating results show that the atomic structure of Ga2O3 remained stable at high temperatures. Only when SnO2 became amorphization and began breaking down, did Ga2O3 begin breaking down together. Hence, this study demonstrates an excellent thermal stability of the SnO2/Ga2O3/SnO2 ultra-thin heterojunction. The research result provides important reference for the preparation and high temperature applications of ultra-small heterojunction.
Keywords Ga2O3;SnO2;core-shell structure;heterostructure;TEM characterization;in-situheating
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