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透射电子显微镜在数字合金结构与性能表征方面的应用

李璧丞，吴雨旸，彭春根，车仁超*
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2022年 第41卷 第6期: 1000-6281（2022）06-601-05     下载地址：

透射电子显微镜在数字合金结构与性能表征方面的应用

李璧丞，吴雨旸，彭春根，车仁超*

（1.复旦大学材料科学系，先进材料实验室，上海市分子催化与创新材料重点实验室，上海 200438；2.浙江省实验室计算材料联合研究中心，浙江 杭州 311100）

摘  要 透射电子显微镜因其全面系统的测试条件，成为材料微观领域研究的有效手段。本文利用透射电镜对AlInAsSb数字合金的显微结构进行了系统的研究。通过几何相位分析，发现AlAs插层中的砷原子有沿生长方向扩散的趋势。此外，利用能带结构模拟和电子全息技术揭示了AlAs插层间对电荷分布的影响。这种研究方法显示了透射电镜在半导体材料微观表征方面的优越性，对构建半导体器件的微观结构和宏观性能的联系具有很高的指导价值。

关键词 透射电子显微镜；数字合金；电子全息；几何相位分析

中图分类号：TB383，TG115.21+5.3  文献标识码：A   doi:10.3969/j.issn.1000-6281.2022.06.004

 

Application of transmission electron microscopy in digital alloy structure and property characterization

LI Bi-cheng 1, WU Yu-yang1，PENG Chun-gen1，CHE Ren-chao1，2*

(1. Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Fudan University, Shanghai 200438；2. Joint-Research Center for Computational Materials, Zhejiang Laboratory, Hangzhou Zhejiang 311100, China)

Abstract   The comprehensive and systematic test capability of transmission electron microscope (TEM) makes it an ideal instrument for microscopic detection in the field of material science. In this work, the microstructures of AlInAsSb digital alloys have been systematically investigated by TEM. Based on geometric phase analysis, we find that arsenic atoms in AlAs intercalations tend to diffuse along the growth direction. In addition, the band structure simulations and electron holography are utilized to unveil the effect of AlAs intercalation thickness on the distribution of carriers. This work shows the superiority of TEM in the microscopic characterization of semiconductor materials, which shows an important role in the relation between microstructure to macro performance in semiconductor devices.

Keywords   Transmission electron microscope; Digital alloy; Electron holography; Geometric phase analysis

 

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