超薄SnO2/Ga2O3/SnO2异质结构的原子尺度表征与热稳定性研究

超薄SnO₂/Ga₂O₃/SnO₂异质结构的原子尺度表征与热稳定性研究

胡  捷，王佳恒，李凯旋，蒋仁辉，赵立功，张  莹，

李   雷，赵培丽，孟威威，贾双凤，郑  赫^*，王建波^*

（1. 武汉大学物理科学与技术学院，电子显微镜中心，人工微结构教育部重点实验室和高等研究院，湖北  武汉430072；2. 武汉大学苏州研究院，江苏 苏州215123；3. 武汉大学深圳研究院，广东 深圳518057）

摘 要 本文通过化学气相沉积法制备出Ga₂O₃@SnO₂核壳结构纳米线，利用透射电子显微技术得到Ga₂O₃和SnO₂的取向关系：，，并在原子尺度解析了Ga₂O₃@SnO₂异质结构的相界面；在SnO₂壳层中发现了大量面分布的反向畴结构，进一步在畴界处发现了具有三明治结构SnO₂/Ga₂O₃/SnO₂超薄异质结，其中Ga₂O₃层的厚度为0.3 nm；此外，超薄异质结构在高温下表现出优异的稳定性。研究结果为超小尺寸异质结构的制备与高温下的应用提供了重要参考。

关键词  Ga₂O₃；SnO₂；核壳结构；异质结构；TEM表征；原位加热

中图分类号：TG115. 21⁺ 5. 3；O781; O766⁺. 1；O782⁺. 7；O522⁺. 2；O762   

文献标识码：A  doi:10.3969/j.issn.1000-6281.2022.04.006

Atomic-scale characterizationand thermal stability study of ultra-thin SnO₂/Ga₂O₃/SnO₂ heterostructure

HU Jie¹, WANG Jia-heng¹, LI Kai-xuan¹, JIANG Ren-hui¹, ZHAO Li-gong¹, ZHANG Ying¹, Li Lei¹, ZHAO Pei-li¹, MENG Wei-wei¹, JIA Shuang-feng¹, ZHENG He^1,2,3∗, WANG Jian-bo^1∗

(1. School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan Hubei 430072；2. Suzhou Institute of Wuhan University, Suzhou Jiangsu  215123；3. Wuhan University Shenzhen Research Institute, Shenzhen Guangdong 518057, China)

Abstract  In this paper, Ga₂O₃@SnO₂ core-shell structure nanowires were synthesized by chemical vapor deposition. The orientation relationship between Ga₂O₃ and SnO₂ was obtained through SAED patterns and HAADF images by transmission electron microscopy: , . Furthermore, the HAADF image of phase boundary suggests that Ga₂O₃ and SnO₂ matches well. A large number of SnO₂/Ga₂O₃/SnO₂ ultra-thin heterojunctions with sandwich structure were further discovered in reverse domain structure along . The thickness of ultra-thin Ga₂O₃ layer is only 0.3 nm. Thein-situ heating results show that the atomic structure of Ga₂O₃ remained stable at high temperatures. Only when SnO₂ became amorphization and began breaking down, did Ga₂O₃ begin breaking down together. Hence, this study demonstrates an excellent thermal stability of the SnO₂/Ga₂O₃/SnO₂ ultra-thin heterojunction. The research result provides important reference for the preparation and high temperature applications of ultra-small heterojunction.

Keywords  Ga₂O₃；SnO₂；core-shell structure；heterostructure；TEM characterization；in-situheating

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